Studies of Carrier Localization in Aluminum-gallium-nitrogen Alloys for Efficient UV-emitters

Studies of Carrier Localization in Aluminum-gallium-nitrogen Alloys for Efficient UV-emitters

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AlGaN attracted a lot of interest due to their potential applications in deep UV regions of the spectrum. Due to the technological importance of this material class in the field of energy efficient solid state lighting, water purification and covert communication, studies of optical transitions in these materials are extremely important for understanding their fundamental properties as well as their practical applications.The beam of elements (atom or molecules) from the furnace is then directed to a heated single - crystal substrate, where it condenses and reacts. The growth ... Figure 3.4: Schematic diagram of a TEM image of dislocations [17]. Figure 3.11:anbsp;...


Title:Studies of Carrier Localization in Aluminum-gallium-nitrogen Alloys for Efficient UV-emitters
Author: Naveen K. Jha
Publisher:ProQuest - 2008
ISBN-13:

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